作　　者： ; ; ; ; ;

机构地区： 华南理工大学化学与化工学院广东省绿色化学产品技术重点实验室

出　　处： 《腐蚀与防护》 2009年第6期388-391,共4页

摘　　要： 对镁合金等离子体电解氧化膜的表面制备工艺进行了研究。采用正交设计法优化实验方案,对最佳工艺条件下制备的氧化膜的微观形貌、相组成进行了研究;采用点滴腐蚀、动电位极化曲线、循环阳极极化曲线、电化学阻抗谱及浸泡腐蚀试验对AZ31镁合金及等离子体电解氧化膜的耐腐蚀性能进行了综合评价。结果表明,制备的等离子体电解氧化膜的最佳工艺为KOH 4 g/L、硅酸盐20 g/L、氧化电压300 V、氧化时间30 min;氧化膜主要成分为MgSiO3和Mg2SiO4,经过等离子体电解氧化之后其显微硬度、耐点滴腐蚀、耐均匀腐蚀和耐点腐蚀性能较AZ31镁合金均有较大提高。 The orthogonal design was used to select the optimal plasma electrolytic oxidation process parameters. The and composition of the films prepared under the optimization conditions were investigated. The dropping corrosion test, potentiodynamic polarization curves, cyclic voltammetry curves, EIS and immersion corrosion measurements were employed to evaluate the corrosion resistance of AZ31 magnesium alloy and plasma electrolytic oxidation films. The results showed that the optimal parameters of plasma electrolytic oxidation were 4 g/L KOH, 20 g/L silicate, 300 V, 30 minutes. The ceramic oxide films were composed of MgSiO3 and MgSiO4, and the microhardness, dropping corrosion resistance, uniform corrosion resistance and pitting corrosion resistance could be enhanced considerably.

关 键 词： 等离子体电解氧化 镁合金 动电位极化 电化学阻抗谱

领　　域： [金属学及工艺] [金属学及工艺] [金属学及工艺] [一般工业技术] [金属学及工艺]