作　　者： ; ;

机构地区： 大连民族学院理学院

出　　处： 《发光学报》 2009年第3期285-292,共8页

摘　　要： 我们用变分方法研究了外电场下量子阱中的杂质态结合能,计算中既考虑了电子同体纵光学声子和界面光学声子的相互作用又考虑了杂质中心同体纵光学声子和界面光学声子的相互作用。我们以GaAs/Al0.3Ga0.7As量子阱为例,讨论了结合能随杂质位置、阱宽和电场强度的变化规律。得到了电子-声子相互作用对杂质态结合能和斯塔克效应的修正是相当明显的。 The binding energies of donor impurity states in quantum wells in the presence of an electric field were investigated by a variational method. The impurity-center as well as the bound electron couplings with both the longitudinal optical （LO） and interface optical （IO） phonons were taken into account in the calculation. The binding energies were obtained as the functions of impurity position, well width and electric field strength. The results for GaAs/Al0.3Ga0.7As quantum wells as an example were given and discussed. It was found that the correction due to eleetron-phonon interaction to the impurity state binding energies and the Stark shifts is quite significant.

关 键 词： 施主杂质态 电子 声子相互作用 量子阱 斯塔克效应

领　　域： [理学] [理学] [理学] [理学]