作　　者： ; ; ;

机构地区： 广东工业大学材料与能源学院

出　　处： 《光学学报》 2009年第6期1724-1728,共5页

摘　　要： 采用射频磁控反应溅射技术,在不同的Ar/O2流量比条件下制备了系列Er2O2薄膜样品。采用椭偏光谱和紫外-可见光透射光谱测试分析技术,研究了Er2O3薄膜的折射率、消光系数、透射率和光学带隙等光学常数与制备工艺的关系。研究了不同条件下制备的Er2O3薄膜的介电常数和I～V特性。结果表明,Er2O3薄膜的折射率、禁带宽度和介电常数随Ar/O2流量比的增加而增加,而消光系数基本不随Ar:O2流量比的变化而变化。在Ar:O2流量比为7:1制备的Er2O3薄膜具有较好的物理性能,在可见红外波段其折射率约1.81,消光系数为3.7×10-6,禁带宽度5.73 eV,介电常数为10.5。 Erbium oxide thin films were prepared at different Ar/O2 flow ratios by reactive radio frequency magnetron sputtering. The optical constant and band gap of the Er2O2 thin films were studied by using spectra ellipsometry and ultraviolet-visible spectra. The dielectric properties and current-voltage （Ⅰ-Ⅴ） measurements were carried out on various films. The results reveal that the refractive index, band gap and dielectric constants of the Er2 O3 films increase with increasing Ar：O2 flow ratios, but the extinction coefficient does not change with that new ratio. The Er：O3 films deposited at flow ratios of Ar/O2 7 ： 1 present the best physical properties. The refractive index of the films is 1.81 in the wavelength range of 500 - 1000 nm. The band gap is 5.73 eV. The dielectric constants is 10.5.

关 键 词： 薄膜光学 氧化铒薄膜 磁控反应溅射 光学常数 介电性能

领　　域： [理学] [理学]