机构地区: 广州大学
出 处: 《教育与教学研究》 2009年第6期20-23,共4页
摘 要: Anderson在长时记忆提取过程的研究中首次提出Fan效应这一概念,并以此作为探究不同干扰程度下记忆效果的工具。对于Fan效应的解释主要存在两种对立的理论学说:以Anderson为代表的ACT-R理论和以Radvansky为代表的情景模型理论。为了更好地展开有关Fan效应的研究,促进其在国内记忆研究领域中的应用,对Fan效应的相关理论和研究进行了系统梳理和详细介绍。 The fan effect refers to an increase in response time and/or error rates on a memory test with an increase in the number of competing associations to that memory probe. Since its first demonstration by Anderson(1974), the fan effect has been repheated in many different experimental paradigms with different types of stimuli. There are mainly two theories on explaining the fan effect. One is ACT-R theory which is hold by Anderson, another is mental - model theory which is created by Radvansky. In this paper, we have reviewed the development in fan effect research both in western countries and in China.