作　　者： ; ; ; ;

机构地区： 深圳大学光电工程学院

出　　处： 《电子器件》 2009年第2期237-240,共4页

摘　　要： 在相同的腐蚀温度下,通过控制对蓝宝石衬底的化学腐蚀时间,以研究其对GaN光学性质的影响。测试结果表明:对蓝宝石衬底腐蚀50 min后,外延生长的GaN薄膜晶体质量及光学质量最优,X射线摇摆曲线中,其(0002)面及(10-12)面的半峰全宽分别降低至202.68 arcsec,300.24 arcsec。透射光谱中,其透射率最高,调制深度最大;光致发光谱的近带边发射峰强度最强,其半高全宽也降低到6.7 nm,几乎看不到任何黄光带。 The effects of pretreated time for sapphire substrate on GaN optical properties have been studied, under the same etched temperature. Optical properties are analyzed by transmission spectrum and room temperature photoluminescence spectrum, and the crystal properties are analyzed by high-resolution double crystal X-ray diffraction, these results indicates that the optical and crystal quality of GaN films grown on pretreated sapphire substrate for 50 minutes is the best, in which the full widths at half maximum（FWHMs） of the X-ray diffraction curves in （0002） plane and （10-12） plane are as low as 208. 80 arcsec and 320. 76 acrsec, the yellow luminescence is nearly invisible in the photoluminescence spectrum, the FWHM of photoluminescence is decreased to 6. 7 nm, and the highest transmission ratio and the greatest modulation depth can be shown in the transmission spectrum.

关 键 词： 薄膜 性质 表面处理

领　　域： [电子电信] [电子电信]