作　　者： ; ; ;

机构地区： 桂林电子科技大学材料科学与工程学院

出　　处： 《硅酸盐学报》 2009年第4期591-595,共5页

摘　　要： 以氧化硅粉体为载体,用非均匀成核法制备了锑掺杂氧化锡(antimony-doped tin oxide,ATO)包覆氧化硅导电粉。用电阻测试仪、场发射扫描电镜和能谱仪对粉体进行了表征。结果表明:包覆物加入量由二氧化硅用量的12.5%增加到100%时,包覆层厚度也从110nm增加到600nm。ATO包覆氧化硅粉体的电阻率随处理温度升高的变化趋势与同条件下制备的ATO基本一致,其中包覆物加入量为100%,75%,50%的ATO包覆氧化硅粉在500～1200℃热处理后的电阻率低于200Ω·cm,1100℃热处理后的25%包覆物加入量粉体的电阻率仅为99.9Ω·cm。包覆物加入量为12.5%的包覆粉体的电阻率由1100℃处理后的120.6Ω·cm上升到1200℃处理后的超过20MΩ·cm,这是因为包覆层较薄,在高温处理过程中包覆层上颗粒长大并收缩而使包覆层受到破坏。 Conductive powder was prepared by coating antimony-doped tin oxide （ATO） on silicon dioxide particles using the heterogeneous nucleation method. The powder was characterized by using a resistance tester, scanning electron microscope and energy disperse spectroscope. The results show the thickness of the ATO layer increases from 110nm to about 600nm when the amount of coating material is increased from 12.5% to 100% of the mass of silicondioxide. The varying trend of resistivity with calcination temperature of the ATO-coated silicon dioxide is almost the same as that of the pure ATO under the same conditions. The resistivities of the ATO-coated silicon dioxide powders with the coating amounts of 100%, 75% and 50%, and which was treated at 500 to 1 200 ℃, are below 200 f2.cm, and the resistivity of ATO-coated silicon dioxide with 25% coating and treated at 1 100 ℃ is 99.9 Ω·cm. When the coating amount is 12.5% and the calcination temperature is increased from 1 100 to 1 200 ℃ the coating layer is destroyed and the resistivity of the powder increases from 120.6 Ω·cm to over 20MΩ·cm, which is due to the thinner coating layer, the growth of the crystal grain and the shrinkage of the coating layer during high-temperature calcination.

关 键 词： 锑掺杂氧化锡 包覆 导电粉 电阻率

领　　域： [一般工业技术]