机构地区: 华南理工大学材料科学与工程学院特种功能材料教育部重点实验室
出 处: 《物理学报》 2009年第3期1992-1996,共5页
摘 要: 采用可溶液加工的小分子红光材料2为发光层(EML),制备了不同阴极结构的系列电致发光器件.结果表明,空穴阻挡层(HBL)TPBI的引入能有效降低高功函数(Al,Ag,Au)金属阴极的电子注入势垒,显著改善器件发光效率.与传统阴极结构(Ba/Al)比较,采用TPBI/Ag阴极结构的器件外量子效率提高了57%,主要原因是TPBI/Ag阴极界面形成较低的电子注入势垒,有利于电子注入,使器件发光效率明显提高. Soluble small red molecule No. 2 was introduced as the emitter for light-emitting diodes (PLED) with different cathodes. N-arylbenzinmidzoles (TPBI) was used as hole-blocking layer (HBL) to lower cathode barrier and facilitate electron injection.With TPBI/Ag cathode,the quantum efficiency was increased by 57%.The reason for the efficiency increase is that interfacial dipole layer was formed at the interface between TPBI and Ag,and possibly coordinated reaction between Ag and N atom in TPBI leads to a superior contact between TPBI/Ag.