作　　者： ; ; ; ; ; ;

机构地区： 五邑大学数学物理系

出　　处： 《Journal of Semiconductors》 2008年第12期2393-2397,共5页

摘　　要： 在有源寻址有机发光二极管(active matrix organic light emitting diode,AM-OLED)显示基板中,将电学功能层——薄膜晶体管(thin fil mtransistor,TFT)有源层材料p型掺杂金属诱导晶化(metal induced crystallized,MIC)多晶硅(p+-MIC poly-Si)薄膜的版图适当延伸,来充当OLED的阳极,由于它具有低方块电阻、高功函数的电学特性和半反半透、低吸收率的光学特性,与OLED的金属铝阴极形成了微腔器件,成功地形成了显示基板上的多晶硅薄膜的光学功能层.对这一功能层的厚度进行了优化,比较了不同厚度下TFT器件的电学特性和OLED的光学特性.当其厚度为40nm时为最佳厚度,此时,TFT器件场迁移率、阈值电压、亚阈值幅摆、电流开关比和栅压诱导漏极漏电等性能为最佳,且红光微腔式OLED(microcavity-OLED,MOLED)的出光强度增大,光谱窄化,电流效率与功率效率均有所提高.这不仅使器件的性能有所提高,而且大大地简化了AM-OLED基板的制备流程. In the active matrix addressing organic light-emitting diode （AM-OLED） display panel,we modify electricity functional layer-layout of the poly-Si thin film transistor （TFT） and prolong the source and drain electrode as the anode of OLED,forming the micro cavity AM-OLED with a certain quality factor （Q）. The slight modification of the layout can not only improve the color saturation of the OLED,which is good to display color image,but also omit the process of deposition and photo lithography of OLED＇s ITO anode. As a result, p^＋-MIC poly-Si thin film optic functional layer is formed. The thickness of optic functional layer is optimized;and the electricity characteristic of TFT and the optic characteristic of OLED are compared. When the thickness is 40nm, μFE（cm^2/（V ·s）, Vth（V） ,S（V/decade） ,Ion/Ioff（ × 10^7） at ｜Vds｜= - 5V,GIDL （pA/μm） at Vds = - 5V and Vg = 5V of TFT are very good, and display device （MOLED） with high EL intensity and high saturation performance could be realized. This not only develops the high performance of red MOLED but also greatly results simplification of the preparation process flow.

关 键 词： 型掺杂多晶硅薄膜 微腔 多晶硅薄膜功能层 基板

领　　域： [电子电信]