机构地区: 内蒙古师范大学物理与电子信息学院物理学系
出 处: 《内蒙古师范大学学报(自然科学汉文版)》 1997年第1期22-28,共7页
摘 要: 用变分法研究半导体量子阱中束缚极化子结合能,在计算中包括了界面声子和体声子的影响给出了束缚极化子基态能量和结合能随阱宽变化的数值结果.研究发现,界面声子和体声子对结合能的贡献分别在窄阶和宽阱情况下起主导作用。 Polarons bound to the impurity centers in a semiconductor quantum wellare studied by including both the influences of interface and bulk phonons.' The groundstate energies and the hinding energies of bound electron are calculated by a variationalmethod. The numerical results of the binding energies of the bound polarons are givenas functions of the well-width. It is found that the contributions of the interface andbulk phonons to the binding energy are respectively dominant at thinner and thickerwells. The total binding energy decreases with increasing the well-width.