作　　者： ; ; ; ;

机构地区： 南开大学信息技术科学学院天津市光电子薄膜器件与技术重点实验室

出　　处： 《光电子．激光》 2008年第10期1353-1356,共4页

摘　　要： 制备了4种P型掺杂的多晶硅薄膜;固相晶化(SPC)、金属诱导(MIC)、准分子激光晶化(ELA)和低压化学气象沉积(LPCVD)多晶硅薄膜,并且研究了它们的光学特性与电学特性。结果发现,MIC多晶硅薄膜具有最小的可见光吸收率;ELA和MIC有较小的方块电阻,而SPC和LPCVD方块电阻较大。最后通过对MIC多晶硅薄膜厚度的优化表明,厚度为40 nm的MIC多晶硅薄膜最适合做有机电致发光器件的像素电极。 Four sorts of crystallized Poly-Si thin films were prepared, and their electricity and optical characteristics were studied experimentally. It is found that P^＋-MIC Poly-Si thin film has very low absorption within visible light region; the sheet resistances of ELA and MIC are relatively smaller and those of SPC and LPCVD are relatively Iargeer. The anode of OLED demands relatively small sheet resistances and very low visible light absorption,and the 40 nm of MIC poly-Si Thin Film is the most fit as the anode of OLED by optimizing the thickness of MIC poly-Si thin film.

关 键 词： 多晶硅薄膜电极 光学特性 电学特性 有机电致发光器件

领　　域： [理学] [理学]