作　　者： ; ; ; ; ;

机构地区： 天津工业大学机械工程学院

出　　处： 《光学精密工程》 2008年第9期1701-1705,共5页

摘　　要： 为了研究含N’N-二乙基硫脲添加剂的微电铸工艺金属铜填洞机理,采用线性伏安法、循环电压电流溶出法(CVS)、扫描电镜(SEM)以及XRD测量法研究了N’N-二乙基硫脲对微电铸工艺电化学行为的影响,并借助塔菲尔方程,研究了微电铸铜反应过程中的电极动力学参数。结果表明,当微电铸铜工艺中加入N’N-二乙基硫脲添加剂时,产生活性极化,提高了铜离子还原时所需的活化能,金属离子的放电速度从2.221 4 mA/cm2降低到约0.076 mA/cm2,从而增加了反应时的过电位,促使电极表面晶核成型速度增加,晶体成长速度由2.57μm/min降低到约0.17μm/min,铜离子的平滑能力提高约50%,有效地减小了微电铸时的边沿效应,使金属铜具有良好的填充微型孔洞的能力。本实验通过微电铸工艺成功地将金属铜填充入宽为10μm,深宽比为4∶1的微型凹槽中,且镀层内没有空洞、空隙及细缝等缺陷。 In order to investigate the copper gap-filling in micro eleetroplating process with additive （N＇N-diethylthiourea）, the electrochemical behaviors of electrolyte were analysed by SEM, CVS and XRD, and the electrode dynamic parameters were studied by the Tafei equation. The results show that when N＇N-diethylthiourea is used in micro electroplating copper process, an activation polarization is generated to improve the activation energy, the metal ion discharge rate is lowered from 2. 221 4 mA/cm^2 to about 0. 076 mA/cm^2. Therefore, the overpotential is increased, and the crystal nucleus molding speed on the electrode is accelerated; so that the crystal growth speed is decreased from 2.57 μm/min to about 0.17 μm /min,and the leveling ability is increased about 50%. Experiments show that the side effect is lowered effectively, which makes the copper ions get a good filling ability for micro-trenches. Furthermore, some micro trenches in the silicon wafer with the width of 10 μm and aspect ratio of 4 ： 1 are filled by metal copper in micro electroplating process with N ＇ N-dieth-ylthiourea, the electroplating layer have no voids or seams.

关 键 词： 微电铸工艺 二乙基硫脲 活性极化 电化学行为 填洞能力

领　　域： [电子电信] [金属学及工艺]