作　　者： ; ; ; ; ; ;

机构地区： 杭州师范大学材料与化学化工学院有机硅化学及材料技术教育部重点实验室

出　　处： 《化学工程》 2008年第8期47-49,65,共4页

摘　　要： 静态法测定了甲基苯基二乙氧基硅烷在378.10—423.84 K之间的饱和蒸汽压数据。采用非线性回归的方法得到Antoine常数A,B,C的值分别为8.809 9,3 935.933,87.61,饱和蒸汽压的计算值与实验值之间的误差介于0—2.36%;在2.27—101.325 kPa之间,沸点计算值与文献值的绝对误差不超过3.80 K,以开尔文温度表示的最大相对误差不超过0.77%。通过Clausius-Clapeyron方程计算得到甲基苯基二乙氧基硅烷在378.10—423.84 K之间的平均摩尔蒸发热为50 653.79 J/mol,常压沸点为494.66 K。 The saturated vapor pressure of methylphenyldiethoxysilane （MPDEOS） at various temperatures from 378.10-423.84 K as determined by static method and the Antoine parameters of MPDEOS were regressed by nonlinear regression method with A = 8. 809 9, B =3 935. 933 and C = 87.61. The correlations between saturated vapor pressure and temperature were acquired with the error from 0-2.36%. In the range of 2.27-101. 325 kPa, the absolute error of boiling point between the literature value and calculated value is less than 3.80 K, and the max. relative error expressed as thermodynamic temperature is not more than 0.77%. The molar evaporation heat of MPDEOS at 378. 10-423. 84 K is also estimated by Clausius-Clapeyron equation and its value is 50 653.79 J/mol. The calculated normal boiling point is 494.66 K, which is in a good agreement with the literature value. The obtained Antoine parameters and the molar evaporation heat are very useful for the design and operation of the rectifying tower.

关 键 词： 甲基苯基二乙氧基硅烷 饱和蒸汽压 汽液平衡 方程

领　　域： [理学] [理学] [理学] [理学]