机构地区: 中山大学物理科学与工程技术学院光电材料与技术国家重点实验室
出 处: 《发光学报》 2008年第4期718-722,共5页
摘 要: 用溶胶-凝胶法制备了一系列的MgxZn1-xO(0≤x≤0.3)薄膜,并用X射线衍射(XRD)和光致发光(PL)研究了不同的退火温度和Mg的掺杂含量对MgxZn1-xO薄膜的结构和光学性质的影响。研究表明:MgxZn1-xO薄膜为单相六角纤锌矿结构,并且具有沿c轴的择优取向;发现了中间热处理温度为350℃的MgxZn1-xO薄膜退火温度的转折点为700℃,低于这个温度时随退火温度的升高,(002)衍射峰强度增强且掺Mg的薄膜既有紫外光又有绿光发射;800℃退火时,薄膜的(002)衍射峰强度减小,出现了(100)和(101)衍射峰,且掺Mg的薄膜只有紫外发光峰。不同的掺杂浓度对于发光也有影响,低于700℃退火时,ZnO薄膜只出现紫外发光峰,掺Mg的薄膜却出现了紫外和绿光两个发光峰。 A series of MgxZn1-x O (0 ≤ x ≤0.3 )thin films were successfully fabricated by sol-gel method. The structural and optical properties were studied using, XRD and photoluminescence spectrum. The results indicate that the MgxZn1-xO thin films have hexagonal wurtzite single phase structure and a preferred orientation with the c axis perpendicular to the substrate. It was observed that there is an critical annealing temperature (700 E ) of the MgxZn1 -xO (0.1 ≤x≤0.3) th;.n films preheating at 350 ℃, when annealing below this temperature, the intensity of (002) XRD peak increased, and the PL spectra of MgxZn1-xO (0.1≤x ≤0.3 )thin fihns show both UV emission and green emission; when annealing above this temperature, the intensity of (002) peak decreased while (100) and (101) peak appeared, and the PL spectra of MgxZn1-xO(0.1≤x≤0.3)thin films show only UV emission. The impurity concentration also affect the emission, when annealing below 700 ℃, the PL spectra of pure ZnO thin films show only UV emission, while the PL spectra of the ;MgxZn1-x O (0.1 ≤ x ≤0.3 ) thin films show both UV emission and green emission.