作　　者： ; ; ;

机构地区： 西北工业大学材料学院

出　　处： 《材料导报》 2008年第7期123-125,138,共4页

摘　　要： 采用射频磁控反应溅射法,成功地在n-Si衬底上制备了高κ栅介质Y2O3薄膜。对薄膜在不同温度退火后的结构、成分和电学性能进行了分析研究。结果表明,沉积态薄膜为非晶态,退火后薄膜开始晶化;沉积态薄膜中Y和O元素的原子浓度比基本符合化学计量比;薄膜具有较低的漏电流,退火后薄膜的漏电流降低。高频C-V曲线表明,退火后由于界面层的生长导致积聚电容减小。 Y2O2 high-k thin films are prepared successfully by RF-magnetron reactive sputtering on n-Si sub- strates. The structure, components and electrical characteristics of Y2O3 films annealed at different temperatures are studied. The test results indicate that the as-deposited films are amorphous,and the annealed films are poly cry stallne. The atomic concentration ratio between O and Y accords with the stoichiometric proportion basically, Though the as-de- posited films show low leakage current, the annealed films are much lower. According to the high frequency C-V curves, the accumulation capacitance decreases after annealing due to the growth of interracial layer.

关 键 词： 薄膜 退火 漏电流 界面层

领　　域： [理学] [理学]