作　　者： ; ;

机构地区： 华南师范大学光电子材料与技术研究所

出　　处： 《太阳能学报》 2008年第6期662-665,共4页

摘　　要： 用局部旋转密度近似的方法研究GaN材料的电学性质与光学性质,用Cr跃迁金属替代GaN半导体中的N原子,其原子浓度为1.56%。这种材料用孤立和部分填充的中间带表征,是高效太阳电池的候选材料。对中间带的轨道成分进行分析表明,中间带主要由跃迁金属的t-群轨道构成。吸收系数的理论计算结果表明,半导体材料的次带吸收会导致太阳能转换效率的增加。 The electronic and optical properties of GaN materials were studied with the local spin density approximation in this paper, where Cr transition metal substitutes for N in the GaN semiconductor with an atomic concentration of 1.56 %. This material, characterized by an isolated and partially filled intermediate band, is a candidate for high-efficiency solar cells. The orbital composition of this intermediate band was analyzed, and it is mainly made up of a t-group orbital of the transition metal. The theoretical calculation results of absorption coefficient show a sub-gap absorption with respect to the semiconductor materials which could lead to an increase of conversion efficiency in solar cells.

关 键 词： 中间带 电学性质 光学性质 半导体材料

领　　域： [电子电信]