作　　者： ; ; ; ; ; ;

机构地区： 华中科技大学机械科学与工程学院数字制造与装备技术国家重点实验室

出　　处： 《半导体光电》 2008年第3期379-382,共4页

摘　　要： 基于裂纹传播扩散法,研究了键合圆片的表面能计算方法,推导出包括圆形、矩形、三角形等形状样品的平均表面能计算公式,并应用于硅片直接键合的表面能计算。应用实例表明,上述公式能方便地计算出键合圆片的平均表面能,实现对键合质量的检测和评估,进而可以指导和优化圆片直接键合工艺。 Based on the crack-opening method, analytical expression of surface energy for bonded wafers was studied. The calculation formulas of average surface energy for round, rectangle and triangle samples were deduced, and then surface energy of silicon direct bonding was calculated. The theory and formula were applied in surface energy measurement for real silicon direct bonding. It follows the results that a convenient method for surface energy detection of wafer direct bonding is provided, and evaluation for wafer direct bonding will be realized, which can guide and optimize the wafer direct bonding process.

关 键 词： 圆片键合 界面 裂纹传播扩散 表面能 测试

领　　域： [电子电信]