作　　者： ; ;

机构地区： 广东工业大学材料与能源学院

出　　处： 《电工材料》 2008年第2期38-42,共5页

摘　　要： ZnO是一种很有前途的宽带隙半导体材料,在光电器件的应用上,实现高质量的p型掺杂是其关键所在。迄今,已有大量p型掺杂ZnO薄膜的研究报道,但是要获得高质量的可重复的p型ZnO薄膜却十分困难。本文就p型ZnO薄膜的掺杂最新研究进展进行了详细论述,并展望了其制备前景。 ZnO has been considered as a promising wide band gap semiconducting material, whose high quality p-type doping is the key for developing optoelectronic devices. To date, the p-type ZnO films has been achieved by many researchers. However, it has typically been difficult to prepare high-quality p-type ZnO films reproducibly. This paper reviews the detail and forecast the preparation trends of p-type ZnO film.

关 键 词： 型掺杂 共掺杂

领　　域： [电气工程] [一般工业技术]