作　　者： ; ; ; ; ; ;

机构地区： 武汉大学物理科学与技术学院

出　　处： 《物理学报》 2008年第5期3132-3137,共6页

摘　　要： 利用倾斜衬底沉积法在无织构的金属衬底上生长了MgO双轴织构的模板层,在这一模板层上实现了YBa2Cu3O7-x薄膜的外延生长.在外延YBa2Cu3O7-x薄膜前,依次沉积了钇稳定的立方氧化锆和CeO2作为缓冲层.利用X射线衍射2θ扫描、扫描、Ω扫描和极图分析测定了这些膜的结构和双轴织构取向,利用Raman光谱表征了其超导相的品质和取向特性,利用扫描电镜和原子力显微镜观测了薄膜的表面形貌和粗糙度.考察了不同厚度的CeO2层对YBa2Cu3O7-x生长和性质的影响.发现了YBa2Cu3O7-x薄膜的外延生长和性能对CeO2的不同厚度具有显著而独特依赖性,讨论了其可能的机理. Biaxially textured MgO templates were grown on un-textured metal substrates by inclined-substrate-deposition and YBa2 Cu3O7-x films were epitaxially grown on these substrates by pulsed laser deposition. Yttria-stablized-zirconia and CeO2 were deposited in turn as buffer layers prior to YBa2 Cu3O7-x growth. The biaxial alignment features of the films were examined by Xray diffraction 20-scan, pole-figure, φ-scan and rocking curve of 12 angles. The Raman spectroscopy, scanning electron microscopy and atomic force microscopy were used to characterize the orientation order, morphology and surface roughness of the YBa2Cu3O7-x films, respectively. The influence of the thickness of CeO2 on the properties of the YBa2Cu3O7-x films were investigated and the singnificant and unique dependence of the properties of YBa2Cu3O7-x films on the thickness of CeO2 were revealed, The possible mechanisms for this dependence were discussed.

关 键 词： 镀膜导体 缓冲层 厚度依赖性 外延生长

领　　域： [电气工程] [一般工业技术] [电子电信]