作　　者： ; ; ; ;

机构地区： 中南大学材料科学与工程学院粉末冶金国家重点实验室

出　　处： 《功能材料》 2008年第5期757-760,共4页

摘　　要： 利用冷压-烧结技术制备了CuO掺杂的10NiO-NiFe2O4复合陶瓷，研究了CuO掺杂量对10NiO-NiFe2O4复合陶瓷物相组成、显微结构、致密度及导电率的影响。结果表明：当CuO掺杂量为0～12．5％（质量分数）时，烧结样品中主要含有NiO、Cu和NiFe2O4、CuO在氮气气氛下分解为金属Cu，在烧结温度下为液相促进了致密化烧结；1473K烧结时，8．75％CuO掺杂样品的相对密度最大，达到94．43％，比未掺杂样品的相对密度提高了18．16％；当CuO掺杂量为4％时，在1233K温度下样品达到最大导电率5．169S／cm，是未掺杂样品的导电率1．026S／cm的5倍。 The CuO doped 10NiO-NiFe2O4 composite ceramics were prepared with the cold isostatic pressing-sintering process, the effects of CuO content on the phase composition, microstructure,density and electrical conductivity of 10NiO-NiFe2O4 composite ceramics were studied. The results show that the samples are mainly consisted of NiO ,Cu and NiFe2O4 when content of CuO is 0-12.5 % （mass fraction）, CuO is decomposed and forms low melting point phase Cu, which is important to accelerate the sintering densification. When sintered at 1473K, the sample doped with 8.75% CuO relatively have the maximum relative density （94.43%）, which increases 18. 16% compared with the undoped samples. Moreover, when the CuO content is 4%, the sample of 10NiO-NiFe2O4 composite ceramics relatively have the maximum electrical conductivity（5. 169S/cm）, which is 5 times compared with the undoped samples.

关 键 词： 复合陶瓷 掺杂 惰性阳极 铝电解 电导率

领　　域： [冶金工程]