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柔性衬底PET上低温沉积ZnxCd(1-x)O透明导电薄膜
Deposition of Low Resistive Transparent Conducting Zn_xCd_(1-x)O Films on Flexible PET Substrate at Low Temperature

作  者: ; ; ; ;

机构地区: 杭州电子科技大学电子信息学院

出  处: 《无机材料学报》 2008年第2期361-363,共3页

摘  要: 利用直流反应磁控溅射在柔性衬底(聚乙烯对苯二酸脂,PET)上低温沉积了对可见光透明的低电阻率的Zn_xCd_(1-x)O薄膜,并研究了Zn含量x对Zn_xCd_(1-x)O薄膜的结晶性能、电学性能及光学性能的影响.XRD分析结果表明,当x<0.65时,薄膜为CdO结构,但x>0.65时,薄膜为高度取向的ZnO结构.Hall效应测试显示,当x≤0.5时,薄膜的载流子浓度很高,电阻率为10^(-3)Ω·cm的数量级;迁移率随x增加先增大,在x=0.5处达到极大值,然后随x的增加而降低.紫外可见透射谱表明,掺Zn后的Zn_xCd_(1-x)O薄膜在整个可见光波段内的透过率远远高于纯CdO薄膜的透过率.综合分析结果表明,x=0.5是低温制备的低阻、高透光性能薄膜的最佳Zn含量. Low resistivity transparent conducting ZnxCd1-xO films were deposited on flexible Polyethylene Terephthalate(PET) substrates by DC magnetron sputtering. Structural, electrical, and optical properties of the films with different Zn concentrations were investigated. XRD results show that for x ≤0.5, the structure of the film is in CdO phase, while for x 〉0.5, oriented ZnO phase is dominant. Hall results shows that the ZnxCd1-xO films has very high carrier concentration when x ≤0.5, and the electrical resistivitiy of the films is at the order of 10^-3Ω·cm. Carrier mobility shows a maximum value at x=0.5. The transmittance of the ZnxCd1-xO films in the visible range is much higher than that of pure CdO film. It's concluded that x=0.5 is the optimal value at which low electrical resistive, high visible transmittance ZnxCd1-xO films can be deposited at low temperature on flexible substrates.

关 键 词: 直流磁控溅射 柔性衬底 薄膜 透明导电膜

领  域: [理学] [理学]

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