机构地区: 中山大学物理科学与工程技术学院光电材料与技术国家重点实验室
出 处: 《电子器件》 2008年第1期36-39,共4页
摘 要: 通过引入LiF,明显提高了基于八羟基喹啉铝双层有机发光二极管的发光效率。2nm厚的LiF空穴阻挡层可将器件的发光效率从2.6cd/A提高到6.3cd/A,研究结果表明,LiF空穴阻挡层可以有效调节空穴的注入与传输,平衡器件中的空穴与电子,提高有机发光二极管的发光效率。 We demonstrate an improved efficiency in typical Alq3 based bilayer OLEDs with a thin LiF interlayeiF interlayer can effectively influence the electrical performancer inserted into the hole transport layer (e. g. NPB). This thin L and singnificantly improve electroluminescence (EL) efficiency of the devices. The devices with 2 nm LiF layer at optimal position in NPB exhibit a maximum EL efficiency of 6. 3 cd/A, which is 1.5 times higher than that (2. 6 cd/A) of the control device without the LiF. Our results show that the LiF interlayer in hole transport layer may be useful for adjusting the hole injection and transport, and improving the hole-electron balance and EL efficiency in OLEDs.
领 域: [电子电信]