机构地区: 中山大学物理科学与工程技术学院光电材料与技术国家重点实验室
出 处: 《电子器件》 2008年第1期33-35,39,共4页
摘 要: 利用n型硅作为阴极制备了倒置型顶发射有机发光二极管。通过在n-Si阴极和电子传输层(Alq3)之间插入1nm厚的Ba作为电子注入层,将器件的开启电压从20V降低到9V,并且将器件的效率提高了13倍。器件性能的提高主要是因为1nm厚的Ba有效的降低了电子注入的势垒。 We report a significant enhancement of the electron injection by inserting a 1-nm-thick Ba electron injection layer between n-Si cathode and tris (8-hydroxyquinoline) aluminum (Alq3) in inverted top-emitting OLEDs. The turn-on voltages of the OLEDs decreased dramatically from 20 V to 9 V and the efficiencies were significantly enhanced by a factor of 13 with Ba electron injection layer, which played a role in reducing the energy barrier for the electron injection, leading to the reduction of the turn-on voltages and the enhancement of the efficiencies of the n-Si based inverted top-emitting OLEDs.
领 域: [电子电信]