作　　者： ; ; ; ; ; ;

机构地区： 大连理工大学材料科学与工程学院

出　　处： 《半导体技术》 2008年第2期117-120,共4页

摘　　要： 成功地应用电子回旋共振微波等离子体增强化学气相沉积(ECR-PECVD)法在升级冶金级Si衬底上175℃低温条件下沉积了一层优质多晶Si薄膜。研究了压强、流量比对多晶Si薄膜质量的影响,并用Raman、RHEED、SEM、XRD对薄膜结晶性、晶粒大小及显微组织结构进行了表征。发现在恒定气压下,结晶质量随流量比增大先变好后变差,即存在最佳流量比,0.16Pa对应10∶5,而0.4 Pa对应10∶6.8。 A layer of excellent poly-Si film was successfully deposited on upgraded metallurgical Si substrate at 175℃ by ECR-PECVD. Effects of the pressure and the flow ratio （Fr） between hydrogen and silane （diluted by 95 % Ar） on the quality of the film were investigated. The crystallity, the grain size and the crystal structure were characterized by Raman, RHEED, SEM and XRD. Results show that at a constant pressure, first, the crystal quality becomes better with the Fτ increases, and then over a critical value it turns worse. A best Fτ exists at certain values of pressure, which is 10：5 at 0.16 Pa, and 10：6.8 at 0.4 Pa.

关 键 词： 硅衬底 电子回旋共振等离子体增强化学气相沉积 多晶硅薄膜

领　　域： [电子电信]