作　　者： ; ; ; ;

机构地区： 东南大学机械工程学院

出　　处： 《Journal of Semiconductors》 2008年第1期183-188,共6页

摘　　要： 探讨了Metropolis蒙特卡罗方法模拟硅微加工各向异性湿法腐蚀仿真算法.在台阶流动(step flow)模型上引入了腐蚀概率方程,确定了蒙特卡罗转移概率.通过对不同相位晶面(vicinal surface)在掩模下的腐蚀模拟对提出的方法进行了校验分析,解释了蒙特卡罗法处理复杂晶面的原理和过程.模拟测试中,仿真程序能正确地再现不同晶向腐蚀速率特性以及凸角腐蚀的结构形态,经过与目前报道的元胞自动机以及其他种类蒙特卡罗法比较分析,模型具有较高的仿真效率和结果精度.最后,该系统模拟一个实际的微加速度传感器设计中的凸角补偿问题,在震动岛块的掩模补偿设计中验证了模型的正确性. A simulation model based on Metropolis Monte Carlo for anisotropic etching is presented. The step flow model of kink propagation is introduced in the modeling process of the simulation. For the calculation of the transaction probability of the Monte Carlo method, the removal probability function is set forth by using the nearest-neighbor bond-counting model. The simulation is car- ried out on different vicinal surfaces to verify the efficiency of the model. Through understanding the kink propagation,the velocity of high Miller-index facets can be explained. Compared with reported CA and other Monte Carlo methods, this model shows higher efficiency and accuracy in simulation. Finally,compensation for convex corners of the micro accelerometer is perfor/ned, and the visualization result of simulation agrees well with the experimental results.

关 键 词： 蒙特卡罗 单晶硅 各向异性 湿法腐蚀

领　　域： [理学] [理学]