作　　者： ; ;

机构地区： 华南师范大学光电子材料与技术研究所

出　　处： 《西南科技大学学报》 2007年第4期20-24,共5页

摘　　要： 通过器件模拟对n—In1-xGaxN/p—Si异质结的光伏特性进行了研究,并与c—Si同质结薄膜电池的性能作了比较。在AM1.5的光照条件下,n—IGN/p—Si异质结在最佳的电池设计、最佳的材料和最佳的操作参数条件下获得的电池效率达到了27%。电池效率受到薄膜质量的强烈影响,从电子亲和势、多数载流子的迁移率、少数载流子的寿命、薄膜厚度以及掺杂水平的变化可以得到说明。 Photovoltaic properties of n--In1-xGaxN/p--Si hetero-junction were studied by device simulation, and were compared with the performance of c - Si homo-junction thin film cells. Best achievable cell efficiency under AM1.5 illumination conditions were 27% for n-IGN/p--Si hetero-junction, on the condition of optimum cell design, materials and operation parameters. The cell efficiency is strongly affected by film quality, which is proved by variation of electron affinity, majority carrier mobility, minority cartier lifetime, film thickness and doping levels.

关 键 词： 太阳能电池 光伏特性 光致发光

领　　域： [电气工程] [电子电信]