作　　者： ; ; ; ; ; ;

机构地区： 北京师范大学核科学与技术学院低能核物理研究所

出　　处： 《核技术》 2007年第12期971-974,共4页

摘　　要： 采用磁过滤阴极弧沉积技术以金属Ti为阴极在真空室中加入C2H2气体来制备含Ti类金刚石薄膜,研究不同的过滤弯管电流和在有过滤磁场存在条件下不同的C2H2气压对含Ti类金刚石薄膜的成分和组织结构的影响规律。实验结果表明:薄膜是由TiC和类金刚石两种结构组成的复合薄膜。C2H2气压和过滤弯管电流都对含Ti类金刚石薄膜的成分和组织结构有显著的影响。增加C2H2气压和过滤弯管电流都使薄膜中Ti元素的原子百分含量逐渐下降,C元素的原子百分含量逐渐增加,TiC峰强度逐渐降低,半高宽逐渐增加。 Titanium-containing diamond-like carbon films were deposited on silicon substrate by filtered cathodic vacuum arc （FCVA） technology, Effects of C2H2 flow rate and duct current on the composition and structures of the titanium-containing diamond like carbon films were studied. The results showed that the titanium-containing diamond like carbon films were composed of TiC and diamond like carbon structure. The C2H2 flow rate and duct current affected significantly on the composition and structures of the films. The Ti content in the films decreased, but the C content increased, with increasing C2H2 flow rate and duct current.

关 键 词： 磁过滤 类金刚石膜 过滤电流

领　　域： [电子电信]