机构地区: 华南理工大学理学院微电子研究所
出 处: 《电子质量》 2007年第11期25-28,共4页
摘 要: 在辐射的剂量率范围内,无论是国产还是进口的双极晶体管,都有明显的低剂量率辐照损伤增强现象,且纵向NPN管比PNP管严重。本文对引起双极器件辐照损伤差异的机理进行了探讨,并讨论了双极器件的抗辐射加固技术。 In the range of radiation dose rate, the enhanced low-dose-rate sensitivity (ELDRS) exists in either domestic or imported bipolar transistors, and the NPN transistors are more obvious than PNP ones. Possible mechanism for the effect and the radiation hardened technique of bipolar device were discussed.
领 域: [电子电信]