作　　者： ; ;

机构地区： 广东工业大学材料与能源学院

出　　处： 《功能材料》 2007年第A02期642-644,共3页

摘　　要： 采用紫外光诱导热丝CVD沉积技术制备Ta2O5薄膜和Al/Ta2O2/SiMOS电容。利用XRD，AFM测试分析方法研究了紫外光源功率对Ta2O5薄膜结构的影响；通过C-V和，I-V测试对Ta2O5薄膜的介电常数，击穿场强和漏电流等电学性能进行了研究，结果表明：紫外光源的功率越大，Ta2O5薄膜的结晶性越好，介电常数越大，最大值为29，但紫外光功率对击穿场强和漏电流没有明显改善。 The tantalum pentoxide （Ta2O5） films and AI/Ta2O5/Si MOS capacitance were prepared by photo-inducing hot filament CVD. The effects of UV light power on the structure of Ta2O2 films were studied using XRD, AFM. The dielectrics constant, leakage current density and breakdown electric field of samples were studied by C-V and I-V measurement of AI/Ta2O5/Si MOS capacitance. The results revealed that the films grown without inducement of the UV light are amorphous state, whereas the films grown with inducement of the UV-light are crystalline. The maximum value of dielectrics constant is about 29.

关 键 词： 光诱导热丝 薄膜 电学性能

领　　域： [理学] [理学]