作　　者： ; ; ; ; ;

机构地区： 华中科技大学光学与电子信息学院武汉光电国家实验室

出　　处： 《功能材料》 2007年第A01期200-204,共5页

摘　　要： 采用溶胶-凝胶法合成了发光二极管（LED）用R2-xEux（MoO4）3（R=Gd，YLa；0≤x≤2）系列高亮度红色荧光粉，并对其结构与发光性能进行了详细研究。采用粉末x射线衍射（XRD）测量了不同温度下合成的样品结构变化情况，发现当R=y和Gd时，它们具有单斜和正交两种结构：当R=La时，荧光粉只有一种单斜结构．同时用荧光光谱对它们的发光性能进行了研究，发现在相同条件下（相同温度，相同时间，相同浓度）得到的样品的发光强度顺序为La0.8Eu1.2（MoO4）3〉Gd0.8Eu1.2（MoO4）3〉Y0.8Eu1.2（MoO4）3，且它们在395和465nm均有较强的有效激发，这两种波长正好与商用的GaN基LED芯片相匹配,同时研究了煅烧温度及掺杂浓度对其发光性能的影响。 Series of red emitting phosphor R2-xEux（MoO4）3（R=Gd, Y, La; 0≤x≤2） for white fight emitting diode were prepared by sol-gel method. The effects of concentration of activator and heating temperature on crystal structure and luminescent properties were investigated by using XRD and fluorescent spectra. The XRD patterns showed that phosphor Gd0.8Eu1.2（MoO4）3 and Y0.8Eu1.2（MoO4）3 have monoclinic and orthorhombic two crystal structure, and the phosphor La0.8Eu1.2（MoO4）3 has only one monoclinic structure. Their excitation spectra show effective absorption wavelengths at near ultraviolet light （395nm） and blue light （465nm） corresponding to the f-f transition of Eu^3＋. These wavelengths coincide with the emitting fight of commercial GaN-based LED, thus these phosphor may the better candidate for red emitting phosphor for white LED. The emission spectra exhibit most intense red light at 616nm, which is attributed to the ^5D0→^7F2 transition. Among these series of phosphors, the intensity of phosphor La0.8EU1.2（MoO4）3 is the strongest, then is Gd0.8Eu1.2（MoO4）3 and Y0.8Eu1.2（MoO4）3 as the heafing temperature at 900℃.

关 键 词： 红光 钼酸盐 溶胶 凝胶法

领　　域： [理学] [理学]