作　　者： ; ; ; ; ;

机构地区： 河南大学物理与电子学院

出　　处： 《人工晶体学报》 2007年第5期1132-1135,共4页

摘　　要： 利用直流反应磁控溅射法(纯金属锌作为靶材,Ar-N2-O2混合气体作为溅射气体)在石英玻璃衬底上制备了N掺杂p型ZnO薄膜。通过XRD、Hall和紫外可见透射谱分别研究了衬底温度对ZnO薄膜结构性能、电学性能和光学性能的影响。XRD结果显示所有制备的薄膜都具有垂直于衬底的c轴择优取向,并且随着衬底温度的增加,薄膜的晶体质量得到了提高。Hall测试表明衬底温度对p型ZnO薄膜的电阻率具有较大影响,400℃下生长的p型ZnO薄膜由于具有较高的迁移率(1.32 cm2/Vs)和载流子浓度(5.58×1017cm-3),因此表现出了最小的电阻率(8.44Ω.cm)。 N-doped ZnO thin films were prepared on glass substrates by DC reactive magnetron sputtering using a pure zinc disk as target and Ar-N2-O2 mixture as sputtering gas. The effects of substrate temperature on the structural, electrical and optical characteristics of the ZnO films were studied by XRD, Hall effect measurement and UV-vis transmittance spectra, respectively.The results of XRD indicate that all the thin films had a preferred orientation with the c-axis perpendicular to the substrates, and the crystalline quality of the films was improved as the substrate temperature increased. Hall effect measurements show that the resistivity of the p-type ZnO thin films is dependent on the substrate temperature during deposition. The resistivity of the thin film grown at 400℃ had a minimum resistivity of 8.44 Ω·cm due to its higher mobility （1.32cm^2/Vs） and hole concentration （5.58×10^17cm^-3）.

关 键 词： 薄膜 型 直流反应磁控溅射

领　　域： [理学] [理学]