作　　者： ; ; ; ; ;

机构地区： 中国科学院西安光学精密机械研究所

出　　处： 《电子元件与材料》 2007年第10期54-56,共3页

摘　　要： 利用磁控溅射系统在6061铝材上制备了3μm的AlN薄膜。XRD、椭偏测试及耐压测试结果表明,AlN膜为具有良好取向的多晶薄膜,击穿电压高达100V/μm。利用自动划痕仪对AlN膜进行剥离实验,临界载荷为6N左右。AlN和铝基体间的结合主要是物理吸附和机械锚合。用有限元方法对基于AlN膜/Al热沉的LED(发光二极管)封装结构的散热性能进行了分析,模型的内通道热阻约2K/W。 AlN films with thickness of approximately 3μm were deposited by magnetron sputtering system on 6061 Al substrates. Preferential orientation polycrystalline AlN films were discriminated by XRD and spectroscopic ellipsometry. Potential resistance testing show that breakdown voltage of the AlN film is 100 V/μm. The coating-substrate interfacial was investigated by a scratch tester, and the critical load is 6 N. Reasons of strong adhesion was presented by SEM. The package model of LED was analyzed by FEM, results show the internal thermal resistance is 2 K/W.

关 键 词： 无机非金属材料 薄膜 封装 有限元法

领　　域： [一般工业技术]