作　　者： ; ; ; ; ; ; (张芳）;

机构地区： 南开大学信息技术科学学院天津市光电子薄膜器件与技术重点实验室

出　　处： 《Journal of Semiconductors》 2007年第10期1574-1579,共6页

摘　　要： 首先阐述了MIC薄膜多晶硅材料动态镍吸杂技术的基本机理和主要工艺过程,然后以多晶硅薄膜晶体管(poly-Si TFT)为例研究了动态吸杂技术的应用.在研究金属诱导晶化多晶硅材料(MIC poly-Si)和以之为有源层的poly-Si TFT的过程中,发现在MIC多晶硅薄膜中含有部分残余的镍成份.而大部分存在于对撞晶界的残余镍成份会造成大量的缺陷,这将导致TFT器件性能乃至整个系统的稳定性和可靠性的降低.为了改善MIC薄膜及器件质量,我们采用磷硅玻璃(PSG)动态镍吸杂技术,有效地吸除镍,降低多晶硅中镍的残留量,改善对撞晶界的缺陷密度,降低用之制备TFT的漏电流.该技术工艺过程简单,处理成本低,适合于大批量的工业化生产,有望成为制备高稳定性微电子器件与电路系统的必需工艺技术. The basis mechanism and main process flow of metal induced crystallization poly-Si （MIC poly-Si） dynamic gettering are discussed,and its applications are studied for use in poly-Si thin film transistor devices. In the research of MIC poly- Si and producing TFT with poly-Si as the active layer,we find that nickel residue is left in the MIC poly-Si thin film,and the amount of nickel is extremely high along the grain boundary. This can reduce the stability and reliability of the TFT as well as the whole system. In order to improve the performance of MIC thin films and devices,we use dynamic nickel gettering by phosphor-silicate glass （PSG） to absorb nickel effectively,reducing the residual nickel in the poly-Si,reducing the number of defects at the conflicting crystal boundaries,and decreasing the leakage current of the TFT. The simple process flow and low cost make it suitable for industrial manufacturing. This is a necessary step in the production of microelectronics devices and systems.

关 键 词： 金属诱导晶化多晶硅 磷硅玻璃 动态镍吸除 固溶度

领　　域： [理学] [理学]