作　　者： ; ; ; ;

机构地区： 韩山师范学院物理与电子工程系

出　　处： 《佳木斯大学学报（自然科学版）》 2007年第2期192-195,共4页

摘　　要： 采用氢等离子体加热的方法晶化a-Si:H薄膜制备多晶硅薄膜,用Raman散射谱和傅里叶变换红外吸收谱(FT-IR)等方法进行表征和分析.研究了退火的射频功率、衬底温度和退火时间对薄膜微结构和光电性能的影响.结果表明,薄膜的氢含量是影响薄膜光学带隙的主要因素,而薄膜的结晶度是影响薄膜暗电导率的主要因素. Polysihcon thin films have been obtained by hydrogen plasma heating of a - Si： H films deposited by PCVD. The films were characterized and analyzed by Raman and FT- IR spectra. The effects of different annealing conditions, such as RF power, substrate temperature and armealing time on the micro - construction and optical and electric properties were investigated. The results indicate that the content of hydrogen is the main factor that affects the optical gap while the crystalline volume fraction is crucial to the dark conductivity.

关 键 词： 多晶硅薄膜 氢等离子体加热 谱 谱 暗电导率 光学带隙

领　　域： [理学] [理学]