机构地区: 华南理工大学理学院
出 处: 《微电子学》 2007年第2期210-213,共4页
摘 要: 介绍了SiGe异质结双极晶体管的特点,对SiGe异质结双极晶体管的物理机理进行了讨论,进而分析了影响其可靠性的各种可能因素,总结了目前SiGe HBT可靠性加速寿命试验方法,并进行了比较。 Characteristics of SiGe heterojunction bipolar transistors (HBT) are summarized. Physical mechanisms of SiGe HBT's are discussed, and potential factors to affect SiGe HBT's reliability are described in detail. Finally, methods for reliability accelerated life test of SiGe HBT's are summarized and a comparison is made between these techniques.
关 键 词: 异质结双极晶体管 加速寿命试验 可靠性 热载流子效应
领 域: [电子电信]