作　　者： ; ; ; ; ; ;

机构地区： 西北工业大学材料学院

出　　处： 《材料科学与工艺》 2007年第1期52-54,共3页

摘　　要： 在蓝宝石(α-Al2O3)衬底上利用射频磁控反应溅射法制备出SiO2/Si3N4双层增透膜系,并对镀膜后的蓝宝石进行了高温强度测试及其透过率的研究.研究表明:镀膜后蓝宝石的高温强度和透过率均有明显提高;800℃时,镀膜蓝宝石的高温强度比未镀膜提高了41.0%;在3-5μm波段范围内,室温下镀膜后透过率比镀膜前提高8.0%;SiO2/Si3N4膜系具有较高的热稳定性,且与蓝宝石衬底附着良好. Infrared antireflective double layer films of SiO2/Si3 N4 were prepared on sapphire （ α - Al2O3 ） by radio frequency magnetron reactive sputtering. The high temperature strength and transmission of sapphire are measured. The results show that the high temperature strength of sapphire coated with the double layer films of SiO2/Si3 N4 on both sides and transmission of sapphire have been improved greatly. The high strength of sapphire coated with SiO2/Si3N4 films is 41.0% higher than uncoated sapphire sample at 800 ℃ ; the transmission of sapphire coated with SiO2/Si3 N4 films on both sides is 8.0% higher than uncoated sapphire sample at wavelengths from 3 to 5 μm at room temperature. Double layer films of SiO2/Si3 N4 have high heat-stability and high adhesion with sapphire.

关 键 词： 磁控溅射 薄膜 蓝宝石 高温强度 透过率

领　　域： [电子电信]