作　　者： ; ; ; ;

机构地区： 华南理工大学理学院

出　　处： 《物理学报》 2007年第4期2409-2414,共6页

摘　　要： 从聚合物/电极界面修饰的角度对基于饱和红光聚合物PFO-SeBT(9,9-二辛基芴与4,7-二硒吩-2,1,3-苯并噻二唑的无规共聚物)的发光二极管的性能进行了改进,通过采用CsF/Al阴极并优化CsF的厚度以及在PFO-SeBT1/阳极界面插入聚乙烯基咔唑(PVK)层,使器件的最大电致发光外量子效率达到1.79%,比采用低功函数的金属Ba/Al阴极器件的效率提高了两倍多.器件的性能得以改善的原因是CsF/Al阴极能有效提高电子注入能力以及PVK层对电子的阻挡作用. Polymer light-emitting diodes with saturated red emission were fabricated using the copolymer, poly [2,7-（9,9-dioctyl） fluorene-co-5, 5＇-（ 4, 7-diselenophenyl ）-2, 2＇-yl-2, 1, 3-benzothiadiazole ] （ PFO-SeBT）. Special attention was paid to polymer/electrode interface modification. The highest electroluminescence external quantum efficiency of 1.79 %, which was more than twice that of devices with low work function metal cathode Ba/A1, was achieved by incorporation of CsF/A1 cathode with carefully optimized thickness of CsF, and insertion of PVK layer in the PFO-SeBTl/anode interface. Efficient improvement of electron injection of CsF/A1 cathode and blocking effect of PVK to electrons were proposed to be responsible for the improved performances of the device.

关 键 词： 聚合物发光二极管 聚合物 电极界面 阴极 电子注入

领　　域： [电子电信]