机构地区: 电子科技大学电子工程学院微波工程系
出 处: 《微电子学》 2007年第1期1-4,共4页
摘 要: 提出了一种改进的4H-SiC MESFET大信号直流解析模型。该模型基于栅极下面电荷的二维分布进行分析,在考虑电场相关迁移率、速度饱和及沟道内电荷堆积的基础上,计入沟道长度调制效应,建立基于物理的沟道长度调制效应模型。计算结果表明,计入沟道长度调制效应后的直流模型在饱和区与实测的I-V特性较为吻合。 An improved analytical model for 4H-SiC MESFET's was developed, which is based on an analysis of the 2-D distribution of charges under the gate, with field-dependence mobility, velocity saturation, charge buildup and channel-length modulation effects taken into consideration. Simulation results show that the model with channellength modulation effects included agrees with the measured I-V characteristics in the saturation region.
领 域: [电子电信]