作　　者： ; ; ; ; ; (王桂岳）;

机构地区： 北京师范大学核科学与技术学院射线束技术与材料改性实验室

出　　处： 《真空》 2007年第1期29-31,共3页

摘　　要： 提高金属蒸汽真空弧(Metal Vapor Vacuum Arc,MEVVA)离子源注入机的注入效率,大幅度降低注入成本是MEVVA源离子注入技术实用化的关键。为此开展了100型MEVVA源注入机大批量的工件注入均匀性的研究。本文介绍了100型MEVVA源注入机的靶室结构和靶盘分布,研究了0°定位自转、靶盘公转自转、45°定位自转的注入离子浓度分布。这三种方式的注入离子浓度分布都不能满足大批量均匀注入的需要。但45°定位自转的注入离子浓度分布的趋势与另两种相反,这意味着将45°定位自转与0°定位自转或靶盘公转自转相结合进行复合注入,可以得到均匀的注入效果。通过对几种注入方式的拟合计算来确定复合注入的注入比例。最后通过实验研究了靶盘不同运动状态的复合注入,得到了相当均匀的注入效果。 To improve greatly the implantation efficiency and reduce the cost are the key to the indus：trial applications of MEVVA （Metal Vapor Vacuum Arc） source ion implantation. The implantation homogeneity of Type-100 MEVVA source ion implantor was therefore studied. Describes the target chamber structure and target disc layout of the implantor. The implanted ion concentration distribution was discussed involving three indexing modes of target discs, ie. , rotation indexed at 0° both rotation; revolution and rotation indexed at 45°. It was found that the implanted ion concentration distribution of all the three modes cannot meet the requirement for homogeneous implantation in bulk, but the mode of rotation indexed at 45° is reverse to the rest in respect to the implanted ion concetration distribution. It implies that the homogeneous implanted ion concentration distribution is available to implement by combining this mode with one of the rest. A distribution fitting calculation was done for different implantation modes with related experiments carried out to determine the mixing ratio of combined implantation with different indexing modes of target disc discussed. Homogeneous implantation effect in industrial applications was thus obtained to a cartain extent.

关 键 词： 金属蒸汽真空弧 离子注入 定位 定位 注入均匀性

领　　域： [核科学技术]