作　　者： ; ; ; ; ; ; ; ; ; ; ; ; ;

机构地区： 清华大学工程物理系

出　　处： 《Journal of Semiconductors》 2007年第1期78-83,共6页

摘　　要： 测量了反应堆脉冲中子及γ辐照SiGeHBT典型电参数变化.在反应堆1×1013cm-2的脉冲中子注量和256·85Gy(Si)γ总剂量辐照后,SiGeHBT静态共射极直流增益减小了20%.辐照后基极电流、结漏电流增大,集电极电流、击穿电压减小.特征截止频率fT基本不变,fmax略有减小.初步分析了SiGeHBT反应堆脉冲中子及γ辐射的损伤机理. Changes in the typical electronic parameters of SiGe HBTs irradiated by pulse neutron and gamma rays from a reactor are measured. The DC common emitter static current gain of the SiGe HBTs only decreases by about 20% after being irradiated with 1 × 10^13cm^-2 neutron fluence and 256.85Gy（Si） gamma total dose. The base current and the junction leakage current increase,while the collector current and the breakdown voltage decrease for SiGe HBTs after radiation. After irradiation,the cutoff frequency fT is nearly unchanged,but the maximum oscillation frequency fmax decreases a little. The mechanisms of the reactor pulse neutron and gamma rays irradiation damage for SiGe HBTs are preliminarily analyzed.

关 键 词： 辐射效应 反应堆

领　　域： [电子电信]