作　　者： ; ; ;

机构地区： 中南大学物理与电子学院

出　　处： 《中南大学学报（自然科学版）》 2006年第6期1132-1136,共5页

摘　　要： 采用直流磁控溅射技术,以氧化锌铝陶瓷靶为靶材,在玻璃衬底上制备掺铝氧化锌薄膜,研究不同工艺参数对薄膜组织结构、光学性质和电学性质的影响。从薄膜的结构、载流子浓度和迁移率等方面分析掺铝氧化锌薄膜的透射率和电阻率的变化机理。研究结果表明:掺铝氧化锌薄膜具有六角纤锌矿结构且呈c轴择优取向,晶粒垂直于衬底方向柱状生长,衬底温度和氧分压对薄膜的电阻率和透射率具有很大影响。在衬底温度为200℃、氧气与氩气的分压比为1%时,薄膜具有最优电阻率和平均透射率,分别达到1.13×10-3Ω.cm和86.5%。 Using ZnO mixed with 3% Al2O3 （mass fraction） as target, Al-doped ZnO thin films were deposited on glass substrate by means of direct current magnetron sputtering, and the influences of the deposition parameters on the crystallization behavior as well as optical and electrical properties of Al-doped ZnO films were investigated. The change mechanism of the electrical resistivity and optical transmittance was studied from the crystallization behavior as well as the carrier concentration and mobility. The results reveal that Al-doped ZnO film is polycrystalline with the hexagonal crystal structure and has a strongly preferred orientation of c axis perpendicular to the substrate surface. The electrical resistivity and optical transmittance of/M-doped ZnO films are obviously influenced by the substrate temperature and oxygen partial pressure. The obtained film exhibits optimal electrical and optical properties, electrical resistivity of 1. 13 ×10^-3 Ω·cm and optical transmittance of 86. 5 % with the substrate at 200℃ and the pressure ratio of O2 to Ar of 1%.

关 键 词： 掺铝氧化锌薄膜 透射率 电阻率

领　　域： [理学] [理学]