作　　者： ; ; ;

机构地区： 华中科技大学机械科学与工程学院

出　　处： 《激光技术》 2006年第6期567-569,共3页

摘　　要： 为了研究脉冲激光在不同介质中的刻蚀特性,采用20ns短脉冲、248nm准分子激光(能量为150m J^250m J)分别在水和空气两种介质中对半导体单晶S i片进行微刻蚀实验研究。在实验的基础上,研究了两种介质中准分子激光刻蚀S i的刻蚀孔的基本形貌和刻蚀速率,并对结果进行了对比分析。研究结果表明,水辅助激光微加工时,熔屑易从加工区排出,有助于提高加工的表面质量;同时,水的约束提高了冲击作用,使得刻蚀速率加快。 To investigate the technique of laser etching silicon under different mediums, micromachining of silicon was conducted using a short-pulse（ FWHM is 20ns） KrF excimer laserwith energy of 150mJ -250mJ. Laser etching were tested on a silicon workpiece both in air and under water. Based on the results of experiments, basic etching appearance and etching velocities by excimer laser etching silicon under the two mediums were studied, and then the differences were compared. As a result, the molten material is easy to be removed in water-assisted rtficromachining of silicon, which helps to improve the processed surface quality; and the restriction of water improves the impact effect which increases the etching velocity.

关 键 词： 激光技术 水辅助微加工 准分子激光 刻蚀 硅

领　　域： [金属学及工艺]