作　　者： ; ; ; ; ;

机构地区： 西北工业大学材料学院

出　　处： 《半导体光电》 2006年第5期569-572,共4页

摘　　要： 采用直流磁控溅射工艺,以Au为靶材在高阻半导体CdZnTe上制备导电薄膜。系统地研究了溅射功率对沉积速率、薄膜结构、组织形貌及接触性能的影响。结果表明,随溅射功率的增加沉积速率增大。I-V测试表明在高阻CdZnTe上溅射Au薄膜后不经热处理已具有良好的欧姆接触性能,溅射功率为100 W时的接触性能好于功率为40 W和70 W时的接触性能。 Au film has been deposited on CdZnTe semiconductor with high resistivity by DC magnetron sputtering. The influences of the sputtering power on deposition rate,film structure , and contact performance of the film prepared on CdZnTe substrate have been investigated. It is shown that the deposition rate of Au film is firstly increased and then decreased subsequently with the increase of sputtering power. I-V test shows that the ohmic contact properties are well even though without heat treatment. The ohmic contact properties under sputtering power of 100 W are better than those under sputtering power of 40 and 70 W, respectively.

关 键 词： 磁控溅射 溅射功率 导电薄膜 半导体 欧姆接触

领　　域： [电子电信]