作　　者： ; ; ; ;

机构地区： 天津大学

出　　处： 《金属学报》 1996年第11期1209-1214,共6页

摘　　要： 利用双对向靶溅射方法在室温下制备Ｃｏ／Ｔｉ非晶多层膜，并采用原位退火透射电镜和原位热重法，观测了Ｃｏ／Ｔｉ多层膜结构与磁性随温度的变化，结果表明：退火温度ｔａ为４００℃时，薄膜开始晶化，Ｃｏ，Ｔｉ颗粒析出并粗化；ｔａ＞６００℃时，具有铁磁性的Ｃｏ单质完全消失，全部转化为Ｃｏ２Ｔｉ相．热磁测量在３９０及５２０℃附近出现了两个明显的磁性转变峰，与薄膜结构变化对应．适当温度（４００—５２０℃）的退火可获得高饱和磁化强度的Ｃｏ－Ｔｉ颗粒膜． The Co / Ti multilayer thin films with an amorphous microstructure are prepared by dual facing target sputtering (DFTS) at room temperature. The evolution of the microstructure and magnetization in Co / Ti multilayer thin film during annealing has been investigated by in situ saturation magnetization measurements and the conventional transmission electron microscopy (TEM). Annealing results showed that crystalline Ti precipitated at 400℃ and Co at 500℃. Increasing temperature resulted in the coarsening of Co precipitates and the simultaneous growth of Ti grains. At temperature of about 600℃, Co phase disappeared and Co2Ti phase formed. The thermal magnetic measurement result also shows two clear magnetic changes at 390 and 520℃ respectively, corresponding to the changes in the microstructure of the film. The Co-Ti magnetic granular films can be obtained by annealing at moderate temperature.

关 键 词： 多层膜 非晶 晶化 薄膜 磁性

领　　域： [理学] [理学]