作　　者： ; ; ; ; ; ; (王欢）;

机构地区： 吉林师范大学信息技术学院

出　　处： 《吉林师范大学学报（自然科学版）》 2006年第3期24-25,共2页

摘　　要： 本文采用波长都是808 nm,有源层分别是AlInGaAs和AlGaAs不同材料的两种激光器,针对其热特性做了对比实验.结果发现AlInGaAs应变量子阱激光器在斜率效率、阈值电流、特征温度等方面随温度变化的特性都优于AlGaAs激光器.在20℃时,特征温度可达到200 K,阈值电流380 mA,而且AlInGaAs激光器的寿命也高于AlGaAs激光器,最大寿命达4 000 h,这为改善半导体激光器热特性提供了有利依据,也拓宽了808 nm激光材料的选择范围. This thesis did contrast experiments on AlInGaAs and A1GaAs lasers with the same wavelength 808 nm to compare with their thermal characteristics. The results discover that AlInGaAs strained quantum well lasers excel AlGaAs laser in slope efficiency, threshold current and characteristic temperature and so on. At 20 -40 ℃ the characteristic temperature T0 is 200 K and threshold current Jth is 380 mA. Moreover the life span of AlInGaAs lasers is longer than that of AlInGaAs lasers, which the most longevity is approximately 4 000 h. These experiments datum provide reliable evidence to improve the thermal characteristics of semiconductor lasers, and simultaneously open up laser material choose scope.

关 键 词： 半导体激光器 热特性 应变量子阱

领　　域： [理学] [理学]