作　　者： ; ; ; ;

机构地区： 西北工业大学材料学院

出　　处： 《功能材料》 2006年第7期1146-1148,共3页

摘　　要： 用同步光电子能谱研究了NH4F/H2O2钝化p-CZT表面效应,钝化处理晶体表面后,表面态能峰消失。用未钝化和钝化两种工艺方法来对比p-CZT晶体表面的钝化效果。同时用同步光电子能谱研究了Au与p-CZT接触的界面势垒。其中界面势垒可以由价带区域的新能级EV-C和新能级与Fermi能级的差决定。未钝化和钝化的Au/p-CZT的界面势垒分别为(0.88±0.1)eV和(1.17±0.1)eV。 The effect of passivation with NH4 F/H2O2 agent on p-CZT surface is studied by synchrotron photoemission spectroscopy （SRPES）. It is found that the peak representing surface states disappeares after the passivation treatment. Two processing methods, without passivation treatment and with passivation treatment are adopted to compare the effects of passivation treatment. The interface barrier between Au contact and p-CZT is studied by synchrotron photoemission spectroscopy （SRPES）, where the interface barrier is determined by the discrepancy between Ev-c deduced by the core level with valence band region and EB deduced by the core level with the Fermi edge. The interface barrier is determined to be （0.88±0.1）eV for Au/p-CZT without passivation and for Au/p-CZT after passivation, respectively.

关 键 词： 同步光电子能谱 界面势垒 钝化

领　　域： [电子电信]