作　　者： ; ; ; ; ; ; ; ; ; ;

机构地区： 广东工业大学材料与能源学院

出　　处： 《功能材料》 2006年第6期905-908,共4页

摘　　要： 采用真空阴极电弧沉积技术,在NiTi记忆合金表面沉积了TiAlBN和TiAlCrFeSiBN多元膜和TiN薄膜,研究了薄膜成份及沉积工艺对NiTi合金性能和组织的影响。结果表明,在NiTi合金表面沉积TiAlBN和TiAlCrFeSiBN多元膜和TiN薄膜均可降低合金在Hank溶液中的Ni溶出速率,其中多元膜的Ni溶出速率最小;提高偏压对沉积了TiAlBN多元膜的NiTi合金的Ni溶出速率无明显影响,但使沉积了TiAlCrFeSiBN膜的NiTi合金的Ni溶出速率降低。在TiAlBN和TiAlCrFeSiBN多元膜表面存在较多细小的钛滴和孔隙,钛滴与薄膜基体之间的融合良好;在TiN薄膜表面存在一些大钛滴和孔隙,钛滴与薄膜基体之间的融合不好。镀膜后,NiTi基体的加热相变点移向低温区,其幅度与薄膜成份及沉积工艺有关,提高偏压使沉积了两种多元膜的NiTi基体的相变点移动幅度增大,但却使沉积了TiN膜的NiTi基体的相变点的移动幅度减小。镀膜过程均使NiTi中的M体尺寸增大。 TiA1BN and TiA1CrFeSiBN multi-component nitride films and TiN films were deposited on NiTi shape memory alloy with vacuum cathode arc deposition method. The effect of film composition and their deposition process on the properties and microstructure of NiTi substrate has been researched. The results show that the Ni ion release rate of NiTi substrate in Hank＇s solution decreases after TiA1BN, TiA1CrFesiBN and TiN films are deposited on it. The NiTi substrates with the multi-component films have minimum Ni ion release rate. There is no obvious change of Ni ion release rate in the substrate with TiA1BN films and there is decrease of Ni ion release rate in the substrate with TiA1CrFeSiBN films as bias voltage increases. There are many small titanium droplets and pores on the surface with TiA1BN and TiA1CrFeSiBN films, with which the droplets cohere very well. There are some big titanium droplets and pores on the surface with TiN films, with which the droplets don＇t cohere very well. The transformation temperature in the heating of NiTi substrate decreases after the films are deposited, whose extent is dependent on the film composition and their deposition process. The extent of decrease on the substrate with TiA1BN and TiA1CrFeSiBN films increases and the extent on the substrate with TiN films decreases as bias voltage increases. The films deposition makes martensite become larger.

关 键 词： 多元氮化物薄膜 形状记忆合金 差示扫描量热法 溶出

领　　域： [金属学及工艺] [一般工业技术] [金属学及工艺]