作　　者： ; ; ; ;

机构地区： 中山大学物理科学与工程技术学院物理系

出　　处： 《中山大学学报（自然科学版）》 1996年第4期120-123,共4页

摘　　要： 采用ＣＯ２脉冲激光掺杂，在Ｐ型和Ｎ型硅中掺入锑和铝，形成浅突变ＰＮ结太阳能电池，通过卢瑟福背散射，给出了ＰＮ结结深和杂质浓度分布，研究了预热温度、激光辐照能量密度、激光脉冲个数对方块电阻和太阳能电池开路电压的影响。 P type and n type doping achieved by CO 2 pulsed laser irradiation in silicon are studied, P N junction for solar cell is formed in the near-surface region between thin film of dopants(Sb, Al)and silicon substrate. Concentration of impurity and depth of p n junction is determined by Backscattering Spectra. The experimential parameters, such as temperature of substrate, power density of laser and number of laser pulse, effect on thin resistance R and open voltoge of solar cell V oc are studied I V characteristics of solar cell is meusured.

关 键 词： 掺杂 激光 太阳能电池 二氧化碳激光器

领　　域： [电气工程]