作　　者： ; ; ;

机构地区： 清华大学机械工程学院摩擦学国家重点实验室

出　　处： 《清华大学学报（自然科学版）》 2006年第5期621-624,共4页

摘　　要： 采用分子自组装成膜技术,在磁头表面制备了1H,1H,2H,2H-全氟癸烷基三乙氧基硅烷(FTE)自组装膜。使用时间飞行二次离子质谱仪(TOF-S IM S)、X射线光电子能谱仪(XPS)、原子力显微镜(AFM)和接触角测量仪对FTE自组装膜进行了表征。XPS测得的FTE自组装膜C 1s谱图中有分谱出现在287.905 eV位置,这证明FTE分子以C—O—S i键与磁头表面结合。通过分析TOF-S IM S测量的不同反应时间的膜厚和其对应的AFM表面形貌图发现,FTE自组装膜形成过程分为表面亚单层膜低覆盖、表面亚单层膜中等覆盖、团聚和聚结4个阶段。实验结果表明,控制反应时间可以在磁头表面制备超薄平整的FTE自组装膜,膜厚为(1.20±0.01)nm,表面粗糙度小于0.2 nm。该层超薄膜使磁头对水的接触角增加到110.5°±0.1,°令磁头的疏水性能得到很大提高,进而较大幅度地提高了磁头表面的抗污染能力。 The hydrophobieity and anti-contamination ability of magnetic head surfaces were improved using self-assembly of silane with a hydroxyl group to form a self-assembled monolayer of 1H, 1H,2H,2H-perfluorodeeyltriethoxysilanes on the magnetic head. A time-of-flight secondary ion mass spectrometer （TOF-SIMS）, X-ray photoelectron spectroscopy （XPS）, an atomic force microscopy （AFM）, and contact angle measurements were used to characterize the monolayer. A component centered at a binding energy of 287.905 eV in the XPS spectra suggests that the monolayer deposit on the magetic head surface with the C-O-Si bond. Comparison between the film thicknesses for various reaction times using TOF-SIMS and the corresponding morphologies using the AFM shows that the monolayer forms through four regimes in the growth process, a low-coverage nucleation regime, an intermediate coverage regime, an aggregation regime, and a coalescence regime. The experimental results show that an ultrathin smooth monolayer, with a thickness of （1. 20± 0.01）nm, Ra of less than 0. 2nm and a water contact angle of 110.5°±0.1°, can be prepared on the magnetic head surface by controlling the reaction time and that this ultra-thin film considerably improves the hydrophobicity of the magnetic head surface.

关 键 词： 磁头 全氟癸烷基三乙氧基硅烷 自组装膜 表征 生长过程

领　　域： [机械工程] [机械工程]