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应用于40Gb/s电吸收调制器的Al_2O_3高速热沉研究
HIGH-SPEED Al_2O_3-BASED SUBMOUNT FOR 40Gb/s ELECTROABSORPTION MODULATORS

作  者: ; ; ; ; ; ;

机构地区: 清华大学信息科学技术学院集成光电子学国家重点实验室

出  处: 《红外与毫米波学报》 2006年第2期105-108,共4页

摘  要: 设计制作了面向40Gb/s电吸收调制器(EAM)的高速微波过渡热沉,并进行了EAM管芯级封装测试的验证.这种基于氧化铝(Al2O3)的热沉采用共面波导(CPW)传输线以实现低损耗微波传送,以及Ta2N薄膜电阻用于EAM的阻抗匹配,采用Ti/Cu/Ni/Au金属材料作为CPW传输线电极材料,从而保证CPW传输线与Ta2N电阻材料之间良好的电接触,使热沉的典型反射系数在0—40GHz范围内均达到优于-21dB的水平.作为验证,采用该种热沉用于高速EAM的管芯级封装,测试得到小信号调制响应带宽超过40GHz. A high-speed submount was designed and fabricated for 40 Gb/s electroabsorption modulators (EAMs), and characterized in the chip-level packaging and testing of an EAM device. The Al2O3-based submount contains a coplanar waveguide (CPW) for microwave signal feeding and a Ta2 N thin-film resistor for impedance matching of EA modulator. Ti/ Cu/Ni/Au metal is introduced as the CPW electrode material, and good contact with Ta2 N thin-film is guaranteed accordingly. Therefore, the typical reflection coefficient of the submount is reduced to be lower than - 21 dB up to 40 GHz. As a demonstration, a high-speed EA modulator was packaged by using the high-speed submount, and the small-signal modulation bandwidth was measured to be over 40 GHz.

关 键 词: 高速热沉 电吸收调制器 共面波导传输线 薄膜电阻 阻抗匹配

领  域: [电子电信] [电子电信]

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