作　　者： ; ; ; ; ; ;

机构地区： 西北工业大学材料学院

出　　处： 《功能材料》 2006年第4期630-631,634,共3页

摘　　要： 对不同腐蚀、钝化表面处理的CZT晶片与Au接触的I-V特性进行了研究。用XPS分析了钝化前后CZT晶体表面成分,发现钝化后CZT晶片表面形成厚度为3.1nm的TeO2氧化层。用Agilent4339B高阻仪进行未腐蚀、腐蚀与腐蚀钝化的CZT晶片I-V特性测试,结果表明腐蚀和腐蚀钝化均能不同程度提高Au/p-CZT接触的势垒高度,相应地减小了漏电流。 The I-V characteristics of Au/p-CZT contacts for various CZT surface treatment including etching and passivation were investigated in this paper. After the passivation, TeO2 oxide layer with the thickness of 3. 1nm was determined on the surface of CZT wafer through the analysis on the CZT surface elements by XPS. I-V characteristics of Au/p-CZT contacts with different surface treatment CZT wafer＇s surface were measured by Agilent 4339B high resistance meter. It was shown that etching and passivation could increase the harrier height of the Au/p-CZT and decrease the leakage current.

关 键 词： 接触 钝化 特性

领　　域： [电子电信]